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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6732-A Issued Date : 1998.07.01 Revised Date : 1999.08.01 Page No. : 1/5 HIRF630 N - Channel MOSFETs Description Dynamic dv / dt Rating * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements This N - Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Absolute Maximum Ratings (Ta=25C) * Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ..................................................................................... 150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Tc=25C) .................................................................................... 74 W * Maximum Voltages and Currents (Tc=25C) Drain To Source Breakdown Voltage ................................................................................ 200 V Gate To Source Voltage................................................................................................... 20 V Continuous Source Current .................................................................................................. 9 A Pulsed Drain Current .......................................................................................................... 36 A Characteristics (Ta=25C) Parameter ID Tc=25C Continuous Drain Current, VGS at 10V EAS Single Pulse Avalanche Energy (1) IAR Avalanche Current (2) EAR Repetitive Avalanche Energy (2) dv / dt Peak Diode Recovery dv / dt (3) Symbol Max. 9 250 9 7.4 5 Units A mJ A mJ V / ns Note : VDD=50V, starting TJ=25C, L=4.6mH, RQ=25, IAS=9A Repetitive rating; width limited by max. Junction temperature. ISD9A, di/dt120A / us, VDDV(BR)DSS, TJ150C Thermal Resistance Symbol RJC RCS RJA Parameter Junction to Case Case to Sink, Flat, Greased Surface Junction to Ambient Min. Typ. 0.5 Max. 1.7 62 Units C/W HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics (Ta=25C) Symbol V(BR)DSS VGS(th) IDSS IGSS IGSS Qg Qgs Qgd ton td(off) tf VDS(on) ID(on) RDS(on) Ciss Coss Crss Min. 200 2 9 Typ. 200 90 60 800 240 90 Max. 4 25 100 -100 40 8 10 2 0.4 Unit V V uA nA nA nC nC nC nS nS nS V A pF pF pF Spec. No. : HE6732-A Issued Date : 1998.07.01 Revised Date : 1999.08.01 Page No. : 2/5 Test Conditions ID=100uA VDS=4V, ID=250uA VDS=200V VGS=20V VGS=-20V ID=10A VDS=200V VGS=10V VDD=100V ID=5A VGS=10V ID=5.0A, VG = 10V VDS=10V, VGS=10V VGS=10V, ID = 5.4A VGS=0V VDS=25V f=1MHz HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve On-Region Characteristic 14 12 2.5 Spec. No. : HE6732-A Issued Date : 1998.07.01 Revised Date : 1999.08.01 Page No. : 3/5 On Resistance Variation with Temperature Normalized Drain-Source On-Resistance 2.3 2.1 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 ID= 3.5 A VGS= 10 V Drain-Source Current (A) 8V 10 VGS=10 8 6 4 5V 2 4V 0 0 2 4 6 8 10 7V 6V 25 50 75 100 125 150 Drain-Source Voltage (V) Junction Temperature (C) Drain Current Variation with Gate Voltage & Temperature 10 Capacitance Characteristics 3000 2500 Drain-Source Current (A) 8 TJ=125C 6 TJ=25C 4 Capacitance (pF) 2000 1500 1000 Ciss 2 500 Crss 0 0 2 4 6 8 0 0 10 20 30 Coss 40 50 Gate-Source Voltage (V) Drain-Source Voltage (V) Transconductance Variation with Drain Current & Temperature 7 TJ= 25C 6 10 Body Diode Forward Voltage Variation with Current & Temperature TJ= 25C gFS,Transconductance (S) 5 TJ=125C 4 3 2 1 0 0 2 4 6 8 10 Reverse Drain Current (A) 8 6 4 2 0 0.2 0.4 0.6 0.8 1 1.2 Drain Current (A) Body Diode Forward Voltage (V) HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6732-A Issued Date : 1998.07.01 Revised Date : 1999.08.01 Page No. : 4/5 Breakdown Voltage Variation with Temperature 1.16 100 1.14 ID=250 uA 1.12 Maximum Safe Operating Area VGS=10 V Single Pulse TC=25C Normalized Drain-Source Breakdown Voltage Drain-Source Current (A) RDS(on) Line 10 100us 1.10 1.08 1.06 1.04 1.02 1.00 0.98 25 50 75 100 125 150 1ms 10ms 1 100ms DC 0 0.1 1 10 100 1000 Junction Temperature (C) Drain-Source Voltage (V) Transient Thermal Response Curve 1.00 r(t) Normalized Effective Transient Thermal Resistance 0.5 0.2 0.1 0.05 RJC(t) = r(t) * RJC(t) RJC =1.7 C / W P(pk) t1 0.10 0.02 0.01 t2 TJ-TC=P* RJC(t) Duty Cycle,D=t1/t2 Single Pulse 0.01 0.01 0.1 1 10 100 1000 Time (ms) HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-220AB Dimension Marking : A D B E C HSMC Logo Part Number Date Code Spec. No. : HE6732-A Issued Date : 1998.07.01 Revised Date : 1999.08.01 Page No. : 5/5 Product Series Rank H I G 4 P M 3 2 1 N K Style : Pin 1.Gate 2.Drain 3.Source O 3-Lead TO-220AB Plastic Package HSMC Package Code : E *:Typical DIM A B C D E G H Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398 Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248 Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87 Notes : 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material : * Lead : 42 Alloy ; solder plating * Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : * Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 * Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 * Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5977061 Fax : 886-3-5979220 HSMC Product Specification |
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